SicSem Silicon Carbide Fab
SicSem Private Limited | Compound Semiconductor
India’s first commercial Silicon Carbide fab. A critical technology for defence, EVs, and power infrastructure.
What does this facility make?
Fabricates Silicon Carbide (SiC) semiconductor devices — power chips that can handle extreme heat (2,400°C) and high voltages. Used in electric vehicle inverters, missile systems, radar, space electronics, and power grid equipment.
Why does it matter?
SiC is a compound semiconductor — fundamentally different from the silicon chips made at Tata-PSMC. It is a niche but strategically vital technology. India currently imports all SiC devices. Having a domestic fab reduces vulnerability in defence supply chains and positions India in the fast-growing EV power electronics market.
Key Facts
| Company | SicSem Private Limited |
| Partners | None |
| Type | Compound Semiconductor |
| Capability | SiC Power Devices (60k wafers/year) |
| Status | Approved |
| Investment | ₹2,066 crore |
| Location | Bhubaneswar, Odisha |
| Category | Commercial (ISM Approved) |
Technical Complexity
1.6/5
Benchmarked against a 3nm fab (5/5).
Timeliness
On track
Project Timeline
- 01 Aug 2025 — Approved by Union Cabinet under ISM
OECD Taxonomy Classification
Classification using the OECD’s proposed semiconductor production taxonomy from Chips, Nodes and Wafers: A Taxonomy for Semiconductor Data Collection (OECD STI Policy Paper, August 2024, Figure 7, p. 27). The taxonomy organises front-end wafer fab data into three dimensions: plant information, capability, and capacity.
| Dimension | Field | Value |
|---|---|---|
| Plant Information | Location | Bhubaneswar, Odisha, India |
| Owner | SiCSem Private Limited (India); technology partner: Clas-SiC Wafer Fab, Scotland | |
| Status | Approved | |
| Start year | Info not available | |
| Business model | IDM (Integrated Device Manufacturer) | |
| Capability | Chip type | Analog / Others (Power) |
| Detailed chip type | SiC power devices — MOSFETs; applications include EV inverters, defence, railways, fast-charging infrastructure | |
| Feature size | Not node-defined; SiC power devices are characterised by voltage/current rating, not lithographic node | |
| Wafer size | Info not available | |
| Transistor type | SiC MOSFET | |
| Process technologies | Info not available | |
| Semiconductor material | Silicon Carbide (SiC) | |
| Capacity | Wafer starts per month | ~5,000 wspm (target; 60,000 wafers/year) |
| Cleanroom size | Info not available |
Sources
- PIB: SEMICON India 2025 factsheet (01 Sep 2025)
- PIB: Cabinet approves new semiconductor projects (01 Aug 2025)
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